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SPECTRES RAMAN DES CHALCOGENURES DE GERMANIUM ET ETAINLISITSA ML; ARTAMONOV VV; BEREZHINSKIJ LI et al.1976; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1976; VOL. 21; NO 2; PP. 218-220; ABS. ANGL.; BIBL. 5 REF.Article

OBTENTION DES MONOCRISTAUX DE GES, ETUDE DE LEUR MORPHOLOGIE ET DE LEUR EFFET SUR L'INSCRIPTION DES RESEAUX D'HOLOGRAPHIEBLETSKAN DI; KOPINETS IF; POGORETSKIJ PP et al.1975; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1975; VOL. 20; NO 5; PP. 1008-1012; BIBL. 8 REF.Article

OPTICAL ABSORPTION BAND EDGE IN SINGLE CRYSTAL GES.WILEY JD; BREITSCHWERDT A; SCHONHERR E et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 3; PP. 355-359; BIBL. 22 REF.Article

A THEORETICAL STUDY OF THE PHOTOELECTRON SPECTRA OF GES, GESE, AND GETEWEINBERGER P; WIMMER E.1979; BER. BUNSENGESELLSCH. PHYS. CHEM.; ISSN 0005-9021; DEU; DA. 1979; VOL. 83; NO 9; PP. 890-894; ABS. GER; BIBL. 9 REF.Article

INFRARED REFLECTIVITY AND RAMAN SCATTERING IN GES.WILEY JD; BUCKEL WJ; SCHMIDT RL et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 6; PP. 2489-2496; BIBL. 23 REF.Article

THE DIELECTRIC FUNCTION OF GES SINGLE CRYSTALS DETERMINED BY ELECTRON ENERGY LOSS SPECTROSCOPY.VENGHAUS H; BUCHNER U.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 72; NO 2; PP. 603-607; ABS. ALLEM.; BIBL. 11 REF.Article

PHOTODOPING SENSITIVITY OF AG INTO AMORPHOUS GE30S70 FILMSMARUNO S; BAN S.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 1; PP. 97-101; BIBL. 13 REF.Article

TIGHT-BINDING CALCULATION OF THE DENSITY OF VALENCE STATES OF GES, GESE AND GETENEMANN H; KOSAKOV A.1979; ACTA PHYS. POLON., A; POL; DA. 1979; VOL. 55; NO 5; PP. 779-784; BIBL. 21 REF.Article

ETUDE DES CENTRES LOCALISES DANS LE COMPOSE LAMELLAIRE GESBLETSKAN DI; BUDYANSKIJ VI; GORODETSKIJ I YA et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 8; PP. 1512-1516; BIBL. 10 REF.Article

ETUDE DES MICROCHAMPS ELECTRIQUES INTERNES DANS GES PAR LA METHODE DE L'ABSORPTION ELECTROOPTIQUE SPONTANEEBLETSKAN DI; BUDYANSKIJ VI; KOPINETS IF et al.1975; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1975; VOL. 20; NO 10; PP. 1648-1651; ABS. ANGL.; BIBL. 6 REF.Article

PHOTOLUMINESCENCE DE GESBAGAEV VS; PADUCHIKH LI; STOPACHINSKIJ VB et al.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 2; PP. 398-400; BIBL. 10 REF.Article

FINE STRUCTURE IN THE REFLECTIVITY OF GESWILEY JD; FEHRENBACH GW.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 3; PP. 2963-2965; BIBL. 4 REF.Article

ELECTRICAL STRUCTURE AND TRANSPORT IN AMORPHOUS GES LAYERS.SKACHA J.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 38; NO 2; PP. K143-K146; BIBL. 7 REF.Article

OPTICAL AND PHOTOELECTRICAL PROPERTIES OF GLASSY GESX.ZAVETOVA M; ABRAHAM A.1974; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1974; VOL. 24; NO 12; PP. 1406-1411; BIBL. 11 REF.Article

EVIDENCE FOR IONIC CONDUCTIVITY IN GES1.5 GLASSES.THURZO I; BARANCOK D; VLASAK G et al.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 24; NO 2; PP. 297-299; BIBL. 5 REF.Article

A SIMPLE METHOD FOR THE DETERMINATION OF THE EFFECTIVE ELECTRON MASS FROM CURRENT-VOLTAGE CHARACTERISTICS IN THE THERMIONIC REGION.VODENICHAROV CM.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 42; NO 2; PP. 785-789; ABS. ALLEM.; BIBL. 15 REF.Article

DETERMINATION OF THE EFFECTIVE ELECTRON MASS IN THIN INSULATOR AND SEMICONDUCTOR FILMS.VODENICHAROV C; STANCHEV A.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 37; NO 2; PP. 157-161; BIBL. 11 REF.Article

ELLIPSOMETRIE DES CHALCOGENURES DE GERMANIUM VITREUX DE COMPOSITION CHIMIQUE VARIABLETYAGAJ VA; RASTRENENKO NA; POPOV VB et al.1976; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1976; VOL. 21; NO 8; PP. 1264-1269; ABS. ANGL.; BIBL. 14 REF.Article

ATOMIC PSEUDOPOTENTIALS FOR ORTHORHOMBIC IV-VI COMPOUNDSCIUCCI G; GUARNIERI A; MASSERINI GL et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 29; NO 2; PP. 75-80; BIBL. 15 REF.Article

PHONONS IN AX2 GLASSES: FROM MOLECULAR TO BAND-LIKE MODES.SEN PN; THORPE MF.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 8; PP. 4030-4038; BIBL. 17 REF.Article

ANGULAR-RESOLVED UV PHOTOEMISSION AND THE BAND STRUCTURE OF GES.GRANDKE T; LEY L.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 2; PP. 832-842; BIBL. 13 REF.Article

INFLUENCE OF NEUTRON RADIATION ON THERMAL PARAMETERS OF AMORPHOUS SEMICONDUCTORS.MACKO P; MACKOVA V.1976; ACTA PHYS. SLOV.; TCHECOSL.; DA. 1976; VOL. 26; NO 3; PP. 180-184; BIBL. 12 REF.Article

SEMICONDUCTORS OF THE TYPE MEII MEIVS3.VAN ALPEN U; FENNER J; GMELIN E et al.1975; MATER. RES. BULL.; U.S.A.; DA. 1975; VOL. 10; NO 3; PP. 175-180; BIBL. 8 REF.Article

SPECTRES DE VIBRATION DES CHALCOGENURES DE GERMANIUM CRISTALLINS ET VITREUXARTAMONOV VV; BEREZHINSKIJ LI; BLETSKAN DI et al.1979; UKRAIN. FIZ. ZH.; UKR; DA. 1979; VOL. 24; NO 3; PP. 334-339; ABS. ENG; BIBL. 16 REF.Article

INFRARED REFLECTIVITY OF GES.MIHAJLOVIC P; NIKOLIC PM; HUGHES OH et al.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 21; PP. L599-L602; BIBL. 4 REF.Article

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